Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829477· OSTI ID:22254025

Kao, Tsung-Ting; Liu, Yuh-Shiuan; Mahbub Satter, Md.; Li, Xiao-Hang; Lochner, Zachary; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang; Ryou, Jae-Hyun ^[1]; Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A. ^[2]

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1. School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1−x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2 cm{sup −1} and 10.9 cm{sup −1}, respectively.

• OSTI ID: 22254025
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
DIELECTRIC MATERIALS
HAFNIUM OXIDES
LANTHANUM SELENIDES
LASERS
POWER DENSITY
QUANTUM WELLS
SILICA
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION