Encapsulated gate-all-around InAs nanowire field-effect transistors
- NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.
- OSTI ID:
- 22254022
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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