Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833776· OSTI ID:22253987

Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin ^[1]; Phillip Ahrenkiel, S. ^[2]

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1. MicroLink Devices, Inc., Niles, Illinois 60714 (United States)
2. South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)

InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm{sup 2}.

• OSTI ID: 22253987
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CURRENT DENSITY
ELECTRIC CONTACTS
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM DOTS
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY