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Title: Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

Abstract

InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm{sup 2}.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. MicroLink Devices, Inc., Niles, Illinois 60714 (United States)
  2. South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)
Publication Date:
OSTI Identifier:
22253987
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENT DENSITY; ELECTRIC CONTACTS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Bennett, Mitchell F., Bittner, Zachary S., Forbes, David V., Hubbard, Seth M., E-mail: smhsps@rit.edu, Rao Tatavarti, Sudersena, Wibowo, Andree, Pan, Noren, Chern, Kevin, and Phillip Ahrenkiel, S. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells. United States: N. p., 2013. Web. doi:10.1063/1.4833776.
Bennett, Mitchell F., Bittner, Zachary S., Forbes, David V., Hubbard, Seth M., E-mail: smhsps@rit.edu, Rao Tatavarti, Sudersena, Wibowo, Andree, Pan, Noren, Chern, Kevin, & Phillip Ahrenkiel, S. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells. United States. https://doi.org/10.1063/1.4833776
Bennett, Mitchell F., Bittner, Zachary S., Forbes, David V., Hubbard, Seth M., E-mail: smhsps@rit.edu, Rao Tatavarti, Sudersena, Wibowo, Andree, Pan, Noren, Chern, Kevin, and Phillip Ahrenkiel, S. 2013. "Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells". United States. https://doi.org/10.1063/1.4833776.
@article{osti_22253987,
title = {Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells},
author = {Bennett, Mitchell F. and Bittner, Zachary S. and Forbes, David V. and Hubbard, Seth M., E-mail: smhsps@rit.edu and Rao Tatavarti, Sudersena and Wibowo, Andree and Pan, Noren and Chern, Kevin and Phillip Ahrenkiel, S.},
abstractNote = {InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm{sup 2}.},
doi = {10.1063/1.4833776},
url = {https://www.osti.gov/biblio/22253987}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 103,
place = {United States},
year = {Mon Nov 18 00:00:00 EST 2013},
month = {Mon Nov 18 00:00:00 EST 2013}
}