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Title: Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

Abstract

We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.

Authors:
; ; ; ;  [1];  [2]
  1. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
  2. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22253942
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CORRELATIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; PLATINUM; QUANTUM EFFICIENCY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS

Citation Formats

Binder, M., E-mail: michael.binder@osram-os.com, Galler, B., Furitsch, M., Off, J., Zeisel, R., Katz, S., and Wagner, J. Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes. United States: N. p., 2013. Web. doi:10.1063/1.4833895.
Binder, M., E-mail: michael.binder@osram-os.com, Galler, B., Furitsch, M., Off, J., Zeisel, R., Katz, S., & Wagner, J. Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes. United States. https://doi.org/10.1063/1.4833895
Binder, M., E-mail: michael.binder@osram-os.com, Galler, B., Furitsch, M., Off, J., Zeisel, R., Katz, S., and Wagner, J. 2013. "Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes". United States. https://doi.org/10.1063/1.4833895.
@article{osti_22253942,
title = {Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes},
author = {Binder, M., E-mail: michael.binder@osram-os.com and Galler, B. and Furitsch, M. and Off, J. and Zeisel, R. and Katz, S. and Wagner, J.},
abstractNote = {We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.},
doi = {10.1063/1.4833895},
url = {https://www.osti.gov/biblio/22253942}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 103,
place = {United States},
year = {Mon Nov 25 00:00:00 EST 2013},
month = {Mon Nov 25 00:00:00 EST 2013}
}