Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4834697· OSTI ID:22253932

Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. ^[1]; Mura, G. ^[2]; Rossi, F.; Salviati, G. ^[3]; Holc, K.; Weig, T.; Wagner, J. ^[4]; Schade, L.; Karunakaran, M. A. ^[5]; Schwarz, U. T. ^[4]

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1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)
2. University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)
3. IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)
4. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)
5. IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

• OSTI ID: 22253932
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGING
CATHODOLUMINESCENCE
GALLIUM NITRIDES
LASERS
PHOTOLUMINESCENCE
QUANTUM WELLS
REMOVAL
SIGNALS
STRESSES
SUBSTRATES
THRESHOLD CURRENT