On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4839417· OSTI ID:22253931

Simon Li, Z. M.; Sheng, Yang ^[1]

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1. Crosslight Software Inc., China Branch, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai 200063 (China)

There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to analyze its actual effect in these devices. Simulation results show that hole blocking effect of EBL mainly determines the effectiveness of using it which is more sensitive to its Al composition, band offset ratio, and polarization charges. It is found that the choice of Al composition is critical for EBL to improve the optical performance of GaN-based LEDs.

• OSTI ID: 22253931
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHANNELING
DEPLETION LAYER
DESIGN
ELECTRONS
GALLIUM NITRIDES
LIGHT EMITTING DIODES
POLARIZATION
SIMULATION