Evolution of the conductivity type in germania by varying the stoichiometry
- Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan (China)
Information regarding the conductivity type of Si/GeO{sub x}/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeO{sub x} films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO{sub 2} films exhibit unipolar electron conductivity.
- OSTI ID:
- 22253927
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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