Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4838556· OSTI ID:22253900

Kauko, H.; Zheng, C. L.; Glanvill, S. ^[1]; Zhu, Y.; Dwyer, C. ^[1]; Munshi, A. M.; Fimland, B. O. ^[2]

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1. Monash Centre for Electron Microscopy, Monash University, VIC 3800 (Australia)
2. Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim (Norway)

We demonstrate a method for compositional mapping of Al{sub x}Ga{sub 1–x}As heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

• OSTI ID: 22253900
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ACCURACY
ALUMINIUM ARSENIDES
CONCENTRATION RATIO
ECOLOGICAL CONCENTRATION
GALLIUM ARSENIDES
QUANTUM WIRES
RADIATION DOSES
SPATIAL RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY