Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4841755· OSTI ID:22253889

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. ^[1]; Bharrat, D.; El-Masry, N. A. ^[2]

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1. Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)
2. Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

• OSTI ID: 22253889
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
HOLES
LAYERS
LIGHT EMITTING DIODES
QUANTUM WELLS
SURFACES
THICKNESS
THIN FILMS