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Title: SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Abstract

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

Authors:
 [1]; ;  [1]
  1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)
Publication Date:
OSTI Identifier:
22253878
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AIR; DOPED MATERIALS; ELECTRONS; GRAPHENE; RAMAN SPECTRA; STABILITY

Citation Formats

Al-Mumen, Haider, Department of Electrical Engineering, University of Babylon, Babylon, Dong, Lixin, and Li, Wen. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability. United States: N. p., 2013. Web. doi:10.1063/1.4841615.
Al-Mumen, Haider, Department of Electrical Engineering, University of Babylon, Babylon, Dong, Lixin, & Li, Wen. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability. United States. https://doi.org/10.1063/1.4841615
Al-Mumen, Haider, Department of Electrical Engineering, University of Babylon, Babylon, Dong, Lixin, and Li, Wen. 2013. "SU-8 doped and encapsulated n-type graphene nanomesh with high air stability". United States. https://doi.org/10.1063/1.4841615.
@article{osti_22253878,
title = {SU-8 doped and encapsulated n-type graphene nanomesh with high air stability},
author = {Al-Mumen, Haider and Department of Electrical Engineering, University of Babylon, Babylon and Dong, Lixin and Li, Wen},
abstractNote = {N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.},
doi = {10.1063/1.4841615},
url = {https://www.osti.gov/biblio/22253878}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 103,
place = {United States},
year = {Mon Dec 02 00:00:00 EST 2013},
month = {Mon Dec 02 00:00:00 EST 2013}
}