SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4841615· OSTI ID:22253878

Al-Mumen, Haider ^[1]; Dong, Lixin; Li, Wen ^[1]

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1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

• OSTI ID: 22253878
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AIR
DOPED MATERIALS
ELECTRONS
GRAPHENE
RAMAN SPECTRA
STABILITY