Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833027· OSTI ID:22253855

Goldmann, Elias; Barthel, Stefan; Florian, Matthias; Jahnke, Frank ^[1]; Schuh, Kolja ^[2]

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1. Institute of Theoretical Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany)
2. College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721-0094 (United States)

The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.

• OSTI ID: 22253855
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONFIGURATION INTERACTION
DISTRIBUTION
EFFICIENCY
EMISSION
FINE STRUCTURE
GALLIUM ARSENIDES
GEOMETRY
HEIGHT
INDIUM ARSENIDES
LAYERS
PHOTONS
QUANTUM DOTS
QUANTUM ENTANGLEMENT
SEMICONDUCTOR MATERIALS
STRAINS
WAVELENGTHS