Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4846317· OSTI ID:22253786

Cheol Shin, Woo; Hun Mun, Jeong; Yong Kim, Taek; Choi, Sung-Yool; Yoon, Taeshik; Kim, Taek-Soo ^[1]

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1. Department of Mechanical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.

• OSTI ID: 22253786
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADHESION
ADHESIVES
CHEMICAL VAPOR DEPOSITION
COPPER
EQUIPMENT
FIELD EFFECT TRANSISTORS
FILMS
GRAPHENE
LAYERS
MOBILITY
SILICON
SUBSTRATES