Ge doped GaN with controllable high carrier concentration for plasmonic applications

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4848555· OSTI ID:22253777

Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko ^[1]; Nenstiel, Christian; Hoffmann, Axel ^[2]

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1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
2. Institut fűr Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 10{sup 20} cm{sup −3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm{sup −1} and a surface plasma with an energy around 2000 cm{sup −1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

• OSTI ID: 22253777
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABUNDANCE
CARRIERS
DOPED MATERIALS
ELECTRONS
ELLIPSOMETRY
EQUIPMENT
GALLIUM NITRIDES
LUMINESCENCE
PLASMA
RENORMALIZATION
SPECTRA
SURFACES