Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/Nb:SrTiO{sub 3} junctions
- College of Science, China Jiliang University, Hangzhou, Zhejiang 310018 (China)
Heterojunctions composed of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} and Nb doped SrTiO{sub 3} were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.7 wt. % Nb-SrTiO{sub 3} showed a negligible response to magnetic fields for all temperatures, whereas La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.05 wt. % Nb-SrTiO{sub 3} exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.
- OSTI ID:
- 22253750
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Suppression of photovoltaic effect by magnetic field in Pr{sub 0.65}(Ca{sub 0.75}Sr{sub 0.25}){sub 0.35}MnO{sub 3}/Nb:SrTiO{sub 3} heterostructure
Observation of spin-dependent tunneling and large magnetoresistance in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} ramp-edge junctions