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Title: Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells

Abstract

The photoluminescence quantum efficiencies of a series of Ga(N,As,P)/GaP multiple quantum wells are analyzed. The external quantum efficiencies are derived from the absorbed and the emitted light intensities measured using an integrating sphere mounted inside a closed-cycle helium cryostat. By taking into account the device layer sequences as well as internal reflections and reabsorption, the internal quantum efficiencies yield values above 90% for all samples at cryogenic temperatures. The temperature-dependence of the quantum efficiencies as a function of active quantum well layer design reveal the internal interfaces as remaining growth challenge in these heterostructures.

Authors:
; ;  [1];  [2];  [1]
  1. Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg (Germany)
  2. NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg (Germany)
Publication Date:
OSTI Identifier:
22253733
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CRYOSTATS; DESIGN; GALLIUM PHOSPHIDES; HELIUM; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM WELLS; REFLECTION; TEMPERATURE DEPENDENCE

Citation Formats

Rosemann, N. W., E-mail: Nils.Rosemann@Physik.Uni-Marburg.de, Metzger, B., Volz, K., Chatterjee, S., Kunert, B., Stolz, W., and NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg. Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells. United States: N. p., 2013. Web. doi:10.1063/1.4852575.
Rosemann, N. W., E-mail: Nils.Rosemann@Physik.Uni-Marburg.de, Metzger, B., Volz, K., Chatterjee, S., Kunert, B., Stolz, W., & NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg. Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells. United States. https://doi.org/10.1063/1.4852575
Rosemann, N. W., E-mail: Nils.Rosemann@Physik.Uni-Marburg.de, Metzger, B., Volz, K., Chatterjee, S., Kunert, B., Stolz, W., and NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg. 2013. "Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells". United States. https://doi.org/10.1063/1.4852575.
@article{osti_22253733,
title = {Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells},
author = {Rosemann, N. W., E-mail: Nils.Rosemann@Physik.Uni-Marburg.de and Metzger, B. and Volz, K. and Chatterjee, S. and Kunert, B. and Stolz, W. and NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg},
abstractNote = {The photoluminescence quantum efficiencies of a series of Ga(N,As,P)/GaP multiple quantum wells are analyzed. The external quantum efficiencies are derived from the absorbed and the emitted light intensities measured using an integrating sphere mounted inside a closed-cycle helium cryostat. By taking into account the device layer sequences as well as internal reflections and reabsorption, the internal quantum efficiencies yield values above 90% for all samples at cryogenic temperatures. The temperature-dependence of the quantum efficiencies as a function of active quantum well layer design reveal the internal interfaces as remaining growth challenge in these heterostructures.},
doi = {10.1063/1.4852575},
url = {https://www.osti.gov/biblio/22253733}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 103,
place = {United States},
year = {Mon Dec 16 00:00:00 EST 2013},
month = {Mon Dec 16 00:00:00 EST 2013}
}