Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4852177· OSTI ID:22253716

Lin, Guangyang; Tang, Mengrao; Li, Cheng; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan ^[1]

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1. Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58 eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

• OSTI ID: 22253716
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
BUILDUP
DIFFUSION BARRIERS
FILMS
INTERFACES
LAYERS
NICKEL
SILICA
SILICON OXIDES
VACANCIES