Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4852736· OSTI ID:22253696

Dusanowski, Ł.; Rudno-Rudziński, W.; Mrowiński, P.; Sek, G.; Misiewicz, J. ^[1]; Somers, A.; Reithmaier, J. P.; Höfling, S.; Forchel, A. ^[2]

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1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
2. Technische Physik, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg (Germany)

Exciton and biexciton dynamics in a single self-assembled InAs/In{sub 0.53}Ga{sub 0.23}Al{sub 0.24}As/InP(001) quantum dash emitting near 1.55 μm has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of ∼60 μeV, the biexciton binding energy of ∼3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 ± 0.1 ns and 1.1 ± 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash.

• OSTI ID: 22253696
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BINDING ENERGY
CARRIERS
CORRELATIONS
FINE STRUCTURE
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
RELAXATION
TIME RESOLUTION