Multi-cusp ion source for doping process of flat panel display manufacturing

Journal Article · Sat Feb 15 00:00:00 EST 2014 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4855017· OSTI ID:22253611

Inouchi, Yutaka; Matsumoto, Takeshi; Dohi, Shojiro; Tanii, Masahiro; Takahashi, Genki; Nishimura, Ippei; Tatemichi, Junichi; Konishi, Masashi; Naito, Masao ^[1]

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1. FPD Machine Business Center, Nissin Ion Equipment Co., Ltd., Shiga 528-0068 (Japan)

We developed a multi-cusp ion source for Nissin ion doping system iG5 which is used in low temperature poly-crystalline silicon processes for flat panel display (FPD) manufacturing. In this ion source, BF{sub 3} or PH{sub 3} diluted H{sub 2} plasmas are produced and large area ribbon ion beams are extracted. In general, ion ratio of B{sup +} in BF{sub 3} plasma is much smaller than BF{sub 2}{sup +} in multi-cusp ion sources. We developed a new method to increase B{sup +} ratio and obtained mass analyzed B{sup +} target current of 130 mA. We employed newly improved multi-slot type electrodes for the beam extraction system and obtained stable beams with the uniformity of below 3%. In BF{sub 3} plasmas, several undesirable metal fluorides are produced in the plasma chamber and deposited on the electrode system, which cause glitches and poor beam uniformity. We introduce several cleaning methods.

• OSTI ID: 22253611
• Journal Information: Review of Scientific Instruments, Vol. 85, Issue 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BEAMS
BORON FLUORIDES
BORON IONS
CUSPED GEOMETRIES
HYDROGEN
ION SOURCES
MANUFACTURING
PANELS
PHOSPHORUS HYDRIDES
PLASMA
SILICON