Anisotropic surface phonon dispersion of the hydrogen-terminated Si(110)-(1×1) surface: One-dimensional phonons propagating along the glide planes
- Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan)
- RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-0198 (Japan)
We have measured the surface phonon dispersion curves on the hydrogen-terminated Si(110)-(1×1) surface with the two-dimensional space group of p2mg along the two highly symmetric and rectangular directions of ΓX{sup ¯} and ΓX{sup ′¯} using high-resolution electron-energy-loss spectroscopy. All the essential energy-loss peaks on H:Si(110) were assigned to the vibrational phonon modes by using the selection rules of inelastic electron scattering including the glide-plane symmetry. Actually, the surface phonon modes of even-symmetry to the glide plane (along ΓX{sup ¯}) were observed in the first Brillouin zone, and those of odd-symmetry to the glide plane were in the second Brillouin zone. The detailed assignment was made by referring to theoretical phonon dispersion curves of Gräschus et al. [Phys. Rev. B 56, 6482 (1997)]. We found that the H–Si stretching and bending modes, which exhibit highly anisotropic dispersion, propagate along ΓX{sup ¯} direction as a one-dimensional phonon. Judging from the surface structure as well as our classical and quantum mechanical estimations, the H–Si stretching phonon propagates by a direct repulsive interaction between the nearest neighbor H atoms facing each other along ΓX{sup ¯}, whereas the H–Si bending phonon propagates by indirect interaction through the substrate Si atomic linkage.
- OSTI ID:
- 22253436
- Journal Information:
- Journal of Chemical Physics, Vol. 140, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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