Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4856796· OSTI ID:22253209

Heinrich, Martin ^[1]; Kluska, Sven ^[2]; Hameiri, Ziv; Hoex, Bram ^[1]; Aberle, Armin G. ^[1]

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1. Solar Energy Research Institute of Singapore, National University of Singapore, Singapore, Singapore 117574 (Singapore)
2. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, D-79110 Freiburg (Germany)

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.

• OSTI ID: 22253209
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BEAMS
DENSITY
DOPED MATERIALS
LASERS
PULSES
SEMICONDUCTOR MATERIALS
SILICON