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Title: Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics

Abstract

In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO{sub 2}/Si (S), Al/HfO{sub 2}/SiO{sub 2}/Si (H), and Al/3HfO{sub 2}/SiO{sub 2}/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO{sub 2} dielectric layer, which leads to larger numbers of carriers crowded through the sweep of V{sub G} before the domination of tunneling current. Additionally, the HfO{sub 2} dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e{sup −}-h{sup +}) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO{sub 2} stacking layers are importance to MOS(p) tunneling photo diodes.

Authors:
;  [1]
  1. Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22253199
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 4; Journal Issue: 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CURRENTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM OXIDES; SENSITIVITY; SILICA; SILICON OXIDES; TUNNEL EFFECT

Citation Formats

Pang, Chin-Sheng, and Hwu, Jenn-Gwo. Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics. United States: N. p., 2014. Web. doi:10.1063/1.4871407.
Pang, Chin-Sheng, & Hwu, Jenn-Gwo. Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics. United States. https://doi.org/10.1063/1.4871407
Pang, Chin-Sheng, and Hwu, Jenn-Gwo. 2014. "Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics". United States. https://doi.org/10.1063/1.4871407.
@article{osti_22253199,
title = {Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics},
author = {Pang, Chin-Sheng and Hwu, Jenn-Gwo},
abstractNote = {In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO{sub 2}/Si (S), Al/HfO{sub 2}/SiO{sub 2}/Si (H), and Al/3HfO{sub 2}/SiO{sub 2}/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO{sub 2} dielectric layer, which leads to larger numbers of carriers crowded through the sweep of V{sub G} before the domination of tunneling current. Additionally, the HfO{sub 2} dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e{sup −}-h{sup +}) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO{sub 2} stacking layers are importance to MOS(p) tunneling photo diodes.},
doi = {10.1063/1.4871407},
url = {https://www.osti.gov/biblio/22253199}, journal = {AIP Advances},
issn = {2158-3226},
number = 4,
volume = 4,
place = {United States},
year = {Tue Apr 15 00:00:00 EDT 2014},
month = {Tue Apr 15 00:00:00 EDT 2014}
}