Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

Journal Article · Tue Apr 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4871996· OSTI ID:22253107

Lin, J. Y.; Jiang, H. X. ^[1]

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1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

• OSTI ID: 22253107
• Journal Information: AIP Advances, Vol. 4, Issue 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY
DEPLETION LAYER
DOPED MATERIALS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
SPECTROSCOPY
SUPERLATTICES
SURFACES