Injected-charge-driven increase in electro-optic effect of KTN crystals

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4876237· OSTI ID:22252876

Toyoda, Seiji; Imai, Tadayuki; Miyazu, Jun; Okabe, Yuichi; Ueno, Masahiro; Kobayashi, Junya ^[1]

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1. NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

We report a significant increase in the electro-optic (EO) effect of KTa{sub x}Nb{sub 1-x}O{sub 3} (KTN) crystals that we achieved by injecting carriers into them. The dielectric constant of KTN was increased approximately twofold by carrier injection. The EO beam scanning performance was effectively improved by the increase in the EO effect resulting from the increased dielectric constant. The estimated densities of the trapped electrons were as small as 5.8 × 10{sup 20}m{sup -3}. The very small quantity of injected electrons greatly affected the dielectric constant and EO effect of the KTN crystals.

• OSTI ID: 22252876
• Journal Information: AIP Advances, Vol. 4, Issue 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
DENSITY
PERMITTIVITY
TRAPPED ELECTRONS