Ferromagnetism in undoped One-dimensional GaN Nanowires

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4878976· OSTI ID:22252807

Purushothaman, V. ^[1]; Debnath, R. ^[2]; Arumugam, S. ^[3]

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1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli - 620 024 (India)
2. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
3. Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli – 620 024 (India)

We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup −8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

• OSTI ID: 22252807
• Journal Information: AIP Advances, Vol. 4, Issue 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
DEFECTS
FERROMAGNETISM
GALLIUM
GALLIUM NITRIDES
HYSTERESIS
MAGNETIZATION
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WIRES