High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

Journal Article · Fri Nov 15 00:00:00 EST 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4834355· OSTI ID:22251826

Gedda, Murali; Obaidulla, Sk. Md. ^[1]; Subbarao, Nimmakayala V. V. ^[2]; Goswami, Dipak K. ^[1]

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1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
2. Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)

Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

• OSTI ID: 22251826
• Journal Information: AIP Advances, Vol. 3, Issue 11; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CARRIER MOBILITY
COBALT COMPLEXES
DEPOSITION
DIELECTRIC MATERIALS
FABRICATION
FIELD EFFECT TRANSISTORS
LAYERS
SILICA
SILICON OXIDES