Room temperature strain rate sensitivity in precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposites

Journal Article · Wed Jan 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4863537· OSTI ID:22251623

Sujith, Ravindran; Kumar, Ravi ^[1]

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1. Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)

Investigation on the room temperature strain rate sensitivity using depth sensing nanoindentation is carried out on precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposite sintered using pulsed electric current sintering. Using constant load method the strain rate sensitivity values are estimated. Lower strain rate sensitivity of ∼ 3.7 × 10{sup −3} is observed and the limited strain rate sensitivity of these ceramic nanocomposites is explained in terms of cluster model. It is concluded that presence of amorphous Si-C-N(O) clusters are responsible for the limited flowability in these ceramics.

• OSTI ID: 22251623
• Journal Information: AIP Advances, Vol. 4, Issue 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CERAMICS
CLUSTER MODEL
COMPOSITE MATERIALS
ELECTRIC CURRENTS
HAFNIUM OXIDES
NANOSTRUCTURES
PRECURSOR
SENSITIVITY
SINTERING
STRAIN RATE
TEMPERATURE RANGE 0273-0400 K