In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}

Zerweck-Trogisch, U.; Eng, L. M.; Schönfelder, R.; Koitzsch, A.; Haubner, K.; Jaehne, E.

doi:10.1063/1.4833355

Title: In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}

Full Record
Other Related Research

Abstract

We introduce an in situ vacuum procedure for the optimal preparation and analysis of self-assembled monolayers (SAMs) as used in organic molecular electronics on ferroelectric lead zirconate titanate (PZT) substrates. Excellent ordering of oligothiophene semiconductor layers is heavily promoted through the presence of an interfacial bi-functional SAM layer that binds to both the oxidic PZT surface and the organic semiconductor molecules. The described method can be extended to other material combinations, featuring a variety of substrate materials and molecular functionalities.

Authors:

Zerweck-Trogisch, U.; Eng, L. M. ^[1]; Schönfelder, R.; Koitzsch, A. ^[2]; Haubner, K.; Jaehne, E. ^[3]

Institute of Applied Photophysics, Technische Universität Dresden, D-01062 Dresden (Germany)
Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany)
Institute of Macromolecular Chemistry and Textile Chemistry, Technische Universität Dresden, D-01062 Dresden (Germany)

Publication Date:: Sat Dec 07 00:00:00 EST 2013

OSTI Identifier:: 22251314

Resource Type:: Journal Article

Journal Name:: Journal of Chemical Physics

Additional Journal Information:: Journal Volume: 139; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; FERROELECTRIC MATERIALS; LAYERS; ORGANIC SEMICONDUCTORS; PZT; SUBSTRATES; SURFACES; THIN FILMS

Citation Formats


                    Milde, P., E-mail: Peter.Milde@iapp.de, Zerweck-Trogisch, U., Eng, L. M., Schönfelder, R., Koitzsch, A., Haubner, K., and Jaehne, E. In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4833355.

Copy to clipboard


                    Milde, P., E-mail: Peter.Milde@iapp.de, Zerweck-Trogisch, U., Eng, L. M., Schönfelder, R., Koitzsch, A., Haubner, K., & Jaehne, E. In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}.  United States.  https://doi.org/10.1063/1.4833355

Copy to clipboard


                    Milde, P., E-mail: Peter.Milde@iapp.de, Zerweck-Trogisch, U., Eng, L. M., Schönfelder, R., Koitzsch, A., Haubner, K., and Jaehne, E. 2013.  
        "In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}".  United States.  https://doi.org/10.1063/1.4833355.

Copy to clipboard


                    
@article{osti_22251314,

  title        = {In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}},

  author       = {Milde, P., E-mail: Peter.Milde@iapp.de and Zerweck-Trogisch, U. and Eng, L. M. and Schönfelder, R. and Koitzsch, A. and Haubner, K. and Jaehne, E.},

  abstractNote = {We introduce an in situ vacuum procedure for the optimal preparation and analysis of self-assembled monolayers (SAMs) as used in organic molecular electronics on ferroelectric lead zirconate titanate (PZT) substrates. Excellent ordering of oligothiophene semiconductor layers is heavily promoted through the presence of an interfacial bi-functional SAM layer that binds to both the oxidic PZT surface and the organic semiconductor molecules. The described method can be extended to other material combinations, featuring a variety of substrate materials and molecular functionalities.},

  doi          = {10.1063/1.4833355},

  url          = {https://www.osti.gov/biblio/22251314},
  journal      = {Journal of Chemical Physics},

  issn         = {0021-9606},

  number       = 21,

  volume       = 139,

  place        = {United States},

  year         = {Sat Dec 07 00:00:00 EST 2013},

  month        = {Sat Dec 07 00:00:00 EST 2013}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.4833355

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3} thin films

Journal Article Yunti, Pu; Jiliang, Zhu; Xiaohong, Zhu; ... - Journal of Applied Physics

Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3} (PZT80/20) thin films were deposited on the Pt(111)/Ti/SiO{sub 2}/Si(100) substrates by RF magnetron sputtering. Mainly perovskite crystalline phase with highly (202)-preferred orientation, determined by x-ray diffraction, was formed in the lead zirconate titanate (PZT)(80/20) thin films. Polarization measurements of the unannealed and aged films showed a clear double hysteresis loop. However, the double hysteresis loop phenomenon was greatly suppressed in the PZT thin films annealed under pure oxygen, and thus they exhibited larger remnant polarization (P{sub r} = 6.3 {mu}C/cm{sup 2}). The related mechanism for the appearance of constricted and double hysteresis loops was investigated tomore »« less
https://doi.org/10.1063/1.3549116
Electrical and mechanical properties of ferroelectric thin films laser ablated from a Pb{sub 0.97}Nd{sub 0.02}(Zr{sub 0.55}Ti{sub 0.45})O{sub 3} target

Journal Article Lappalainen, J; Frantti, J; Lantto, V - Journal of Applied Physics

Ferroelectric Nd-modified lead-zirconate-titanate (PZT) thin films were fabricated as capacitor structures with platinum electrodes using pulsed laser ablation deposition. Single-crystal MgO (100) and thermally oxidized Si (100) were used as substrates. The ablation processes were carried out at room temperature in a pressure of 4{times}10{sup {minus}5}mbar in a vacuum chamber. A pulsed XeCl excimer laser with the wavelength of 308 nm was used for the ablation of both platinum and Pb{sub 0.97}Nd{sub 0.02}(Zr{sub 0.55}Ti{sub 0.45})O{sub 3} targets. For the PZT films with thicknesses between 300 and 600 nm, a laser-beam fluence of 1.0J/cm{sup 2} was used. Amorphous PZT films weremore »« less
https://doi.org/10.1063/1.365663
Enhanced dielectric and ferroelectric properties of Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3}/Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} multilayer films

Journal Article Hong, Liu; Xiaogang, Gong; Jine, Liang; ... - Applied Physics Letters

A series of Pb(Zr{sub 1-x}Ti{sub x})O{sub 3} multilayer films consisted of Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3} and Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} were deposited on Pt/Ti/SiO{sub 2}/Si substrates by using radio frequency magnetron sputtering. All the films comprise six periodicities of Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3}/Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} with periodicity thickness of 133 nm, but the layer thicknesses of rhombohedral phase and tetragonal phase in one periodicity are varied. The films with two layer thickness ratio of 1:3 possess enhanced dielectric and ferroelectric properties: dielectric constant {epsilon}{sub r}=328 at 10 kHz, dielectric loss tg{delta}=0.0098, and sharply enhanced remanent polarization P{sub r}=32.6 {mu}C/cm{supmore »« less
https://doi.org/10.1063/1.2783482
Physical characterization of Pb{sub 1}Zr{sub 0.2}Ti{sub 0.8}O{sub 3} prepared by the sol-gel process

Journal Article Bozack, M; Williams, J; Ferraro, J; ... - Journal of the Electrochemical Society

The authors have used Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Rutherford backscattering spectroscopy (RBS) to characterize lead zirconate-lead titanate (PbZrO{sub 3}-PbTiO{sub 3}) of stoichiometry Pb{sub 1}Zr{sub 0.2}Ti{sub 0.8}O{sub 3} prepared by the sol-gel process. The films were deposited on a sputtered film of Pt and annealed at 700 C for 30 min. Dramatic AES and XPS chemical effects are observed in the film due to charge transfer between Ti and Zr and O; the binding energy of the PZT XPS Ti2p{sub 3/2} (Zr3d{sub 5/2}) orbital shifts +5.2 eV (+4.3 eV) compared to the element andmore »« less
https://doi.org/10.1149/1.2044078
Multi-ion-beam reactive sputter deposition of ferroelectric Pb(Zr,Ti)O sub 3 thin films

Journal Article Krupanidhi, S; Hu, H; Kumar, V - Journal of Applied Physics; (United States)

A multi-ion-beam reactive sputter (MIBERS) deposition technique was devised to grow ferroelectric lead zirconate titanate (PZT) thin films of different compositions (Zr/Ti ratios of 50/50 and 56/44) from individual metal targets of Pb, Zr, and Ti. This technique offers a highly controllable deposition process allowing excellent uniformity in composition and thickness over a large area (7.5 cm diameter) on a reproducible basis. The PZT films were deposited on a variety of unheated substrates and annealed by two different techniques, rapid thermal annealing and conventional furnace annealing. Both techniques induced a perovskite phase with good morphology. The effect of the excessmore »« less
https://doi.org/10.1063/1.350719

Similar Records