Electrical transport properties of Si-doped hexagonal boron nitride epilayers

Journal Article · Sun Dec 15 00:00:00 EST 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4860949· OSTI ID:22250876

Majety, S.; Doan, T. C.; Li, J.; Lin, J. Y.

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm{sup 2}/V·s and concentration of n ∼ 1 × 10{sup 16} cm{sup −3}. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

• OSTI ID: 22250876
• Journal Information: AIP Advances, Vol. 3, Issue 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRON MOBILITY
ENERGY LEVELS
HALL EFFECT
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE