Review of radiation damage in GaN-based materials and devices
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32606 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5 (Russian Federation)
- Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, 136-713 (Korea, Republic of)
A review of the effects of proton, neutron, γ-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials.
- OSTI ID:
- 22224151
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 5; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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