Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4816776· OSTI ID:22224119

Wang, Han; Fu, Kan ^[1]

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1. Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)

The atomic layer deposition (ALD) of MgO thin films from bis(cyclopentadienyl) magnesium and H{sub 2}O was studied using in-situ real-time spectroscopic ellipsometry (SE), ex-situ x-ray photoelectron spectroscopy, and grazing-incidence x-ray diffraction. It is found that the initial growth is not linear during the first ten cycles, and magnesium silicate forms spontaneously on the SiO{sub 2}/Si substrates at 250 °C. Submonolayer sensitivity of SE is demonstrated by the analysis of each half-cycle and self-limiting adsorption, revealing characteristic features of hetero- and homo-MgO ALD processes.

• OSTI ID: 22224119
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
DEPOSITION
ELLIPSOMETRY
MAGNESIUM
MAGNESIUM OXIDES
MAGNESIUM SILICATES
NUCLEATION
SENSITIVITY
SILICON OXIDES
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY