Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4822049· OSTI ID:22224113

Hackley, Justin; Richardson, Christopher J. K. ^[1]; Sarney, Wendy L. ^[2]

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1. Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)
2. U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)

The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

• OSTI ID: 22224113
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
ATOMIC FORCE MICROSCOPY
CARBONIZATION
ELECTRON DIFFRACTION
FILMS
MOLECULAR BEAM EPITAXY
REFLECTION
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SURFACES
TEMPERATURE RANGE 0065-0273 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY