skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Development of radon sources with a high stability and a wide range

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4847155· OSTI ID:22220231
;  [1]
  1. National Institute of Radiological Sciences, 4-9-1, Anagawa, Inage-ku, Chiba 263-8555 (Japan)

A solid {sup 222}Rn (radon) source using a fibrous and porous SiC ceramic disk was developed. The emission rate of radon emanated from the disk depended on the content of {sup 226}Ra and the sintering temperature. A {sup 226}Ra sulfate ({sup 226}RaSO{sub 4}) solution was dropped on a fibrous SiC ceramic disk (33 mmφ) of 1 mm in thickness, and sintered at 400 °C. The radon concentration from a disk containing {sup 226}Ra of 1.85 MBq was measured to be 38 kBq m{sup −3} at a carrier airflow rate of 0.5 L min{sup −1}. By adjusting the {sup 226}Ra content or the sweep airflow rate, the radon concentrations were easily controlled over a wide range of over three orders of magnitude. The concentration was very stable for a long term. The compactness of the source disk made is easy for handling the source container and the shielding of gamma radiation from {sup 226}Ra and its decay products. Such advantages in a radon generation system are desirable for experiments of high-level, large-scale radon exposure.

OSTI ID:
22220231
Journal Information:
Review of Scientific Instruments, Vol. 84, Issue 12; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
Country of Publication:
United States
Language:
English