Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells

Journal Article · Mon Jul 22 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4816503· OSTI ID:22218308

Tutu, F. K.; Wu, J.; Lam, P.; Tang, M.; Liu, H. ^[1]; Miyashita, N.; Okada, Y. ^[2]; Wilson, J.; Allison, R. ^[3]

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1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)
2. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904 (Japan)
3. Defence Science and Technology Laboratory, Portsdown West, Portsdown Hill Road, Fareham Hants PO17 6AD (United Kingdom)

We report enhanced solar cell performance using high-density InAs quantum dots. The high-density quantum dot was grown by antimony mediated molecular beam epitaxy. In-plane quantum dot density over 1 × 10{sup 11} cm{sup −2} was achieved by applying a few monolayers of antimony on the GaAs surface prior to quantum dot growth. The formation of defective large clusters was reduced by optimization of the growth temperature and InAs coverage. Comparing with a standard quantum dot solar cell without the incorporation of antimony, the high-density quantum dot solar cell demonstrates a distinct improvement in short-circuit current from 7.4 mA/cm{sup 2} to 8.3 mA/cm{sup 2}.

• OSTI ID: 22218308
• Journal Information: Applied Physics Letters, Vol. 103, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ANTIMONY
DENSITY
ELECTRIC CURRENTS
ELECTRICAL FAULTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PERFORMANCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SOLAR CELLS