Extreme ultraviolet induced defects on few-layer graphene
Journal Article
·
· Journal of Applied Physics
- FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands)
- ASML, De Run 6501, 5504DR Veldhoven (Netherlands)
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.
- OSTI ID:
- 22218260
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Graphene defect formation by extreme ultraviolet generated photoelectrons
Work function engineering of single layer graphene by irradiation-induced defects
Oxidation and disorder in few-layered graphene induced by the electron-beam irradiation
Journal Article
·
Thu Aug 07 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22218260
Work function engineering of single layer graphene by irradiation-induced defects
Journal Article
·
Mon Oct 21 00:00:00 EDT 2013
· Applied Physics Letters
·
OSTI ID:22218260
+5 more
Oxidation and disorder in few-layered graphene induced by the electron-beam irradiation
Journal Article
·
Mon May 02 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:22218260
+5 more