Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift
- All-Russia Electrotechnical Institute, Krasnokazarmennaya 12, 111250 Moscow (Russian Federation)
- The Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
It is shown that, in addition to the diffusion and broken neutrality drift (BND) modes well-known for insulators and very lightly doped semiconductors, the quasineutral drift (QND) mode is possible. The transition from the BND to QND mode is accompanied by the appearance of a portion with a very sharp current rise in the current-voltage characteristic. This effect is observed in a new type of semiconductor detectors (CIDs, Current Injected Detectors) of high-intensity neutron and proton radiation, suggested, in particular, for Large Hadron Collider. The effect is unambiguously attributed now to the presence of radiation-induced deep centers in a semiconductor. It is shown, however, in this paper that the effect of a very sharp rise in current upon a slight increase in voltage is even possible when there are no deep centers. An equation adequately describing the possible transport modes in intrinsic semiconductors and insulators is derived. The results of an analytical study are confirmed by an adequate simulation.
- OSTI ID:
- 22218240
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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