Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

Journal Article · Mon Aug 12 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818682· OSTI ID:22218228

Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming ^[1]; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei ^[2]; Zou, Jin ^[1]

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1. Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072 (Australia)
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China)

In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

• OSTI ID: 22218228
• Journal Information: Applied Physics Letters, Vol. 103, Issue 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
CATALYSIS
CATALYSTS
CONCENTRATION RATIO
FABRICATION
GOLD
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHASE DIAGRAMS
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY