Creation of a two-dimensional electron gas and conductivity switching of nanowires at the LaAlO{sub 3}/SrTiO{sub 3} interface grown by 90{sup o} off-axis sputtering
- Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706 (United States)
- Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)
Two-dimensional electron gas (2DEG) formed at the interface between two oxide band-insulators LaAlO{sub 3} and SrTiO{sub 3} raises the possibility to develop oxide nanoelectronics. Here, we report the creation of a 2DEG at the LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces grown by 90° off-axis sputtering which allows uniform films over a large area. The electrical transport properties of the LaAlO{sub 3}/SrTiO{sub 3} heterointerface are similar to those grown by pulsed laser deposition. We also demonstrate room-temperature conductive probe-based switching of quasi-one-dimensional structures. This work demonstrates that a scalable growth process can be used to create the two-dimensional electron gas system at oxide heterointerfaces.
- OSTI ID:
- 22218223
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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