Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires

Journal Article · Mon Aug 05 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818338· OSTI ID:22218216

Venkatesan, Sriram; Scheu, Christina ^[1]; Madsen, Morten H.; Krogstrup, Peter; Johnson, Erik ^[2]; Schmid, Herbert ^[3]

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1. Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, Butenandstr 5-13(E), 81377 München (Germany)
2. Nano-Science Center and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)
3. INM-Leibniz Institute for New Materials, 66123 Saarbrücken (Germany)

Straight, axial InAs nanowire with multiple segments of Ga{sub x}In{sub 1−x}As was grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the Ga{sub x}In{sub 1−x}As/InAs interfaces and a higher Ga concentration for the early grown Ga{sub x}In{sub 1−x}As segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

• OSTI ID: 22218216
• Journal Information: Applied Physics Letters, Vol. 103, Issue 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM FLUORIDES
INTERFACES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
TERNARY ALLOY SYSTEMS
X RADIATION
X-RAY SPECTROSCOPY