Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films
- Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
- Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)
Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.
- OSTI ID:
- 22218157
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
COMPARATIVE EVALUATIONS
CURIE POINT
DENSITY FUNCTIONAL METHOD
FERROMAGNETIC MATERIALS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GERMANIUM ALLOYS
HALL EFFECT
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE ALLOYS
MODIFICATIONS
MOLECULAR BEAM EPITAXY
SPIN ORIENTATION
STRAINS
SUBSTRATES
THIN FILMS