Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

Journal Article · Mon Aug 19 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818270· OSTI ID:22218131

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. ^[1]; Lin, Y. H. ^[2]; Goldman, R. S. ^[1]

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1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

• OSTI ID: 22218131
• Journal Information: Applied Physics Letters, Vol. 103, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
STRAINS
SURFACE TREATMENTS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
VALENCE