Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Journal Article · Wed Aug 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4818433· OSTI ID:22218088

Derrien, Thibault J.-Y. ^[1]; Itina, Tatiana E. ^[1]; Torres, Rémi; Sarnet, Thierry; Sentis, Marc ^[2]

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1. Laboratoire Hubert Curien (LabHC), UMR CNRS 5516 - Université Jean-Monnet. Bâtiment F, 18 rue du Professeur Benoit Lauras, F-42000 Saint-Etienne (France)
2. Laboratoire Lasers, Plasmas et Procédés Photoniques (LP3), UMR CNRS 7341 - Aix-Marseille Université, Parc Technologique et Scientifique de Luminy, Case 917, 163 avenue de Luminy, F-13288 Marseille Cedex 09 (France)

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

• OSTI ID: 22218088
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CARRIERS
EXCITATION
INCIDENCE ANGLE
LASER RADIATION
LASERS
PERIODICITY
PLASMONS
POLARONS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES