Near sputter-threshold GaSb nanopatterning
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
- School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e.g., <10{sup 17} cm{sup −2}) and up to nanostructure saturation (e.g., ∼10{sup 18} cm{sup −2}). Low-energy irradiation is conducted for energies between 15–100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb is found to delay nanostructure formation and this is predominant at energies below 100 eV. In-situ quartz crystal microbalance measurements collect sputtered particles yielding the sputter rate at threshold energies indicating a correlation between erosion and surface composition consistent with recent theoretical models. Ion-induced segregation is also found and indicated by both compositional measurements of both the surface and the sputtered plume.
- OSTI ID:
- 22218067
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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