skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Energy resolution and related charge carrier mobility in LaBr{sub 3}:Ce scintillators

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4823737· OSTI ID:22217979
; ; ;  [1]
  1. Luminescence Materials Research Group, Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, Delft, 2629JB (Netherlands)

The scintillation response of LaBr{sub 3}:Ce scintillation crystals was studied as function of temperature and Ce concentration with synchrotron X-rays between 9 keV and 100 keV. The results were analyzed using the theory of carrier transport in wide band gap semiconductors to gain new insights into charge carrier generation, diffusion, and capture mechanisms. Their influence on the efficiency of energy transfer and conversion from X-ray or γ-ray photon to optical photons and therefore on the energy resolution of lanthanum halide scintillators was studied. From this, we will propose that scattering of carriers by both the lattice phonons and by ionized impurities are key processes determining the temperature dependence of carrier mobility and ultimately the scintillation efficiency and energy resolution. When assuming about 100 ppm ionized impurity concentration in 0.2% Ce{sup 3+} doped LaBr{sub 3,} mobilities are such that we can reproduce the observed temperature dependence of the energy resolution, and in particular, the minimum in resolution near room temperature is reproduced.

OSTI ID:
22217979
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 12; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English