Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy

Journal Article · Mon Sep 23 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4823511· OSTI ID:22217969

Fan, L. L.; Chen, S.; Wu, Y. F.; Chen, F. H.; Chu, W. S.; Chen, X.; Zou, C. W. ^[1]; Wu, Z. Y. ^[1]

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1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.

• OSTI ID: 22217969
• Journal Information: Applied Physics Letters, Vol. 103, Issue 13; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CRYSTALS
FILMS
LAYERS
MOLECULAR BEAM EPITAXY
ORIENTATION
OXYGEN
PHASE TRANSFORMATIONS
SUBSTRATES
VACANCIES
VALENCE
VANADIUM
VANADIUM OXIDES