In situ study of atomic layer deposition Al{sub 2}O{sub 3} on GaP (100)

Journal Article · Mon Sep 16 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4821779· OSTI ID:22217958

Dong, H.; Brennan, B.; Qin, X.; Hinkle, C. L.; Kim, J.; Wallace, R. M. ^[1]; Zhernokletov, D. M. ^[2]

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1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
2. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

The interfacial chemistry of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A “self-cleaning” effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.

• OSTI ID: 22217958
• Journal Information: Applied Physics Letters, Vol. 103, Issue 12; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ABUNDANCE
ALUMINIUM OXIDES
CHEMICAL STATE
CHEMISTRY
CONCENTRATION RATIO
ECOLOGICAL CONCENTRATION
GALLIUM PHOSPHIDES
PHOSPHORUS OXIDES
SEMICONDUCTOR MATERIALS
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY