Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

Journal Article · Fri Sep 27 00:00:00 EDT 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4822197· OSTI ID:22217956

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. ^[1]; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. ^[2]; Fafard, S. ^[3]

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1. Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)
2. Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)
3. Cyrium Technologies Inc., Ottawa, ON (Canada)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

• OSTI ID: 22217956
• Journal Information: AIP Conference Proceedings, Vol. 1556, Issue 1; Conference: CPV-9: 9. international conference on concentrator photovoltaic systems, Miyazaki (Japan), 15-17 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CONCENTRATION RATIO
EPITAXY
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INTERFACES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
TUNNEL EFFECT
VARIATIONS