Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

Journal Article · Mon Sep 30 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4823584· OSTI ID:22217943

Trinh, Hai-Dang ^[1]; Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho ^[1]; Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia ^[2]; Wang, Shin-Yuan ^[3]; Yi Chang, Edward ^[1]

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1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)
2. Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)
3. Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup −4} A/cm{sup −2}. The D{sub it} value of smaller than 10{sup 12} eV{sup −1}cm{sup −2} has been obtained using conduction method.

• OSTI ID: 22217943
• Journal Information: Applied Physics Letters, Vol. 103, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CURRENT DENSITY
DIFFUSION BARRIERS
EV RANGE
FERMI LEVEL
HAFNIUM OXIDES
INDIUM ANTIMONIDES
INTERFACES
LAYERS
LEAKAGE CURRENT
METALS
SEMICONDUCTOR MATERIALS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY