Growth and properties of GaSbBi alloys

Journal Article · Mon Sep 30 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4824077· OSTI ID:22217941

Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Veal, T. D. ^[1]; Yu, K. M. ^[2]; Scanlon, D. O. ^[3]; Buckeridge, J. ^[4]; Jones, T. S.; Ashwin, M. J. ^[5]

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1. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
3. Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom)
4. Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)
5. Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)

Molecular-beam epitaxy has been used to grow GaSb{sub 1−x}Bi{sub x} alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb{sub 0.95}Bi{sub 0.05}, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.

• OSTI ID: 22217941
• Journal Information: Applied Physics Letters, Vol. 103, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALLOYS
DENSITY FUNCTIONAL METHOD
FILMS
GALLIUM ANTIMONIDES
LATTICE PARAMETERS
MEV RANGE
MOLECULAR BEAM EPITAXY
REDUCTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THICKNESS
ULTRAVIOLET SPECTRA
VALENCE
VISIBLE SPECTRA
X-RAY DIFFRACTION