Epitaxy and stress of MgO/GaAs(001) heterostructures

Journal Article · Mon Oct 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4825316· OSTI ID:22217920

Wang, Shibo; Sarkar, Anirban; Gruber, Markus; Koch, Reinhold ^[1]

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1. Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Altenberger Straße 69, A-4040 Linz (Austria)

We report on the preparation of epitaxial MgO film on GaAs(001) substrates by molecular beam epitaxy at growth temperature of 20–200 °C. Reflection high energy electron diffraction, x-ray diffraction, and high resolution transmission electron microscopy reveal the growth of ordered crystalline cubic MgO(001) film at ∼200 °C with MgO(001)[100]|| GaAs(001)[100] and a 4 : 3 lattice registry. The surface of the MgO films, characterized by atomic force microscopy, exhibits a root mean square roughness of only 0.5 nm. In situ stress measurements reveal tensile stress as low as 1.7 GPa for a growth temperature of 200 °C in good agreement with the calculated residual misfit strain.

• OSTI ID: 22217920
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
ELECTRON DIFFRACTION
FILMS
GALLIUM ARSENIDES
LAYERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
PRESSURE RANGE GIGA PA
REFLECTION
RESIDUAL STRESSES
RESOLUTION
ROOTS
ROUGHNESS
STRAINS
SUBSTRATES
SURFACES
TENSILE PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION