skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial films of Heusler compound Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} with high crystalline quality grown by off-axis sputtering

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4825338· OSTI ID:22217908
; ;  [1]; ;  [2];  [3]; ;  [2]
  1. Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Leibniz Institute for Solid State and Materials Research Dresden, IFW, D-01171 Dresden (Germany)
  3. Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210 (United States)

Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} films with a surface roughness of 0.12 nm have been grown epitaxially on lattice-matched MgAl{sub 2}O{sub 4} (001) substrates by off-axis sputtering. X-ray diffraction shows pronounced Laue oscillations, rocking curves as narrow as 0.0043°, and clear Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (111) peaks indicating L2{sub 1} ordering. Magnetic characterizations show a clear magnetocrystalline anisotropy comprising cubic and epitaxy-induced uniaxial terms. Nuclear magnetic resonance measurements reveal L2{sub 1} order of 81% in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} films. Magnetotransport measurements show a distinct separation of anisotropic magnetoresistance and ordinary magnetoresistance. These results demonstrate the state-of-the-art crystalline quality and magnetic uniformity of the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} films.

OSTI ID:
22217908
Journal Information:
Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English